NSS40301MZ4T3G

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Mfr.Part #
NSS40301MZ4T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 40V 3A SOT223
Stock
4,333
In Stock :
4,333

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
Emitter Base Voltage (VEBO) :
6V
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
4
Terminal Form :
Gull wing
Collector Base Voltage (VCBO) :
40V
Number of Pins :
4
Transition Frequency :
215MHz
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Transistor Type :
NPN
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Breakdown Voltage :
40V
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
40V
Power Dissipation :
2W
Gain Bandwidth Product :
215MHz
Frequency :
215MHz
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 1V
Base Part Number :
NSS40301
Package / Case :
TO-261-4, TO-261AA
Max Collector Current :
3A
Vce Saturation (Max) @ Ib, Ic :
200mV @ 300mA, 3A
hFE Min :
220
Max Power Dissipation :
2W
Terminal Position :
Dual
Element Configuration :
Single
Number of Elements :
1
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Pin Count :
4
Pbfree Code :
yes
Surface Mount :
yes
Radiation Hardening :
No
Datasheets
NSS40301MZ4T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS40301MZ4T3G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Pins:4, Base Part Number:NSS40301, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, NSS40301MZ4T3G pinout, NSS40301MZ4T3G datasheet PDF, NSS40301MZ4T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS40301MZ4T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS40301MZ4T3G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSS40301MZ4T3G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 215MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

NSS40301MZ4T3G Features


the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 200mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz


NSS40301MZ4T3G Applications


There are a lot of ON Semiconductor
NSS40301MZ4T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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