NSS40501UW3T2G

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Mfr.Part #
NSS40501UW3T2G
Manufacturer
onsemi
Package / Case
3-WDFN Exposed Pad
Datasheet
Download
Description
TRANS NPN 40V 5A 3WDFN
Stock
17,353
In Stock :
17,353

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
Dual
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Collector Emitter Breakdown Voltage :
40V
Max Power Dissipation :
1.5W
Mounting Type :
Surface Mount
Radiation Hardening :
No
Transistor Element Material :
SILICON
Number of Pins :
3
Gain Bandwidth Product :
150MHz
Pbfree Code :
yes
Max Collector Current :
5A
Published :
2007
Collector Emitter Saturation Voltage :
150mV
Vce Saturation (Max) @ Ib, Ic :
150mV @ 400mA, 4A
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
40V
Transistor Application :
SWITCHING
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
40V
Collector Base Voltage (VCBO) :
40V
Surface Mount :
yes
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 2V
Element Configuration :
Single
Length :
2mm
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Height :
750μm
Number of Elements :
1
Frequency :
150MHz
Number of Terminations :
3
Transition Frequency :
150MHz
Base Part Number :
NSS40501
Power - Max :
875mW
Width :
2mm
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
hFE Min :
200
Power Dissipation :
1.5W
Emitter Base Voltage (VEBO) :
6V
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Lead Free :
Lead Free
Package / Case :
3-WDFN Exposed Pad
Factory Lead Time :
2 Weeks
Datasheets
NSS40501UW3T2G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS40501UW3T2G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, Base Part Number:NSS40501, Operating Temperature:-55°C~150°C TJ, Package / Case:3-WDFN Exposed Pad, NSS40501UW3T2G pinout, NSS40501UW3T2G datasheet PDF, NSS40501UW3T2G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS40501UW3T2G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS40501UW3T2G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount

NSS40501UW3T2G Overview


DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 5A volts.

NSS40501UW3T2G Features


the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


NSS40501UW3T2G Applications


There are a lot of ON Semiconductor
NSS40501UW3T2G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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