NSS40501UW3T2G
- Mfr.Part #
- NSS40501UW3T2G
- Manufacturer
- onsemi
- Package / Case
- 3-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 40V 5A 3WDFN
- Stock
- 17,353
- In Stock :
- 17,353
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Max Collector Current :
- 5A
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 150mV
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 400mA, 4A
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Surface Mount :
- yes
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Element Configuration :
- Single
- Length :
- 2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 750μm
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Base Part Number :
- NSS40501
- Power - Max :
- 875mW
- Width :
- 2mm
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Package / Case :
- 3-WDFN Exposed Pad
- Factory Lead Time :
- 2 Weeks
- Datasheets
- NSS40501UW3T2G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSS40501UW3T2G Overview
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 5A volts.
NSS40501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS40501UW3T2G Applications
There are a lot of ON Semiconductor
NSS40501UW3T2G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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