NSS40300MDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Number of Pins :

8

Published :

2008

Collector Emitter Breakdown Voltage :

40V

Height :

1.5mm

Vce Saturation (Max) @ Ib, Ic :

170mV @ 200mA, 2A

Terminal Finish :

Tin (Sn)

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

3A

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

653mW

Number of Elements :

2

Pin Count :

8

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-170mV

Current - Collector (Ic) (Max) :

3A

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Width :

4mm

Max Power Dissipation :

783mW

Terminal Form :

Gull wing

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

40V

Turn Off Time-Max (toff) :

530ns

Length :

5mm

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Emitter Base Voltage (VEBO) :

7V

Number of Terminations :

8

Collector Base Voltage (VCBO) :

40V

Element Configuration :

Dual

Qualification Status :

Not Qualified

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING