NSS40200LT1G
- Mfr.Part #
- NSS40200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 9,851
- In Stock :
- 9,851
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 540mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Max Collector Current :
- 2A
- Base Part Number :
- NSS40200
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 500mA 2V
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 170mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 460mW
- Transition Frequency :
- 100MHz
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 460mW
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -135mV
- hFE Min :
- 250
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Datasheets
- NSS40200LT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS40200LT1G Overview
DC current gain in this device equals 220 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -135mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 170mV @ 200mA, 2A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 2A volts.
NSS40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS40200LT1G Applications
There are a lot of ON Semiconductor
NSS40200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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