NSS40500UW3T2G
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- Mfr.Part #
- NSS40500UW3T2G
- Manufacturer
- onsemi
- Package / Case
- 3-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A 3WDFN
- Stock
- 240
- In Stock ：
- 240
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 760ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 3
- Published :
- 2007
- Number of Elements :
- 1
- Power - Max :
- 875mW
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- 3-WDFN Exposed Pad
- Collector Emitter Voltage (VCEO) :
- 40V
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 220ns
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2A 2V
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -310mV
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- hFE Min :
- 250
- Collector Base Voltage (VCBO) :
- 40V
- Max Collector Current :
- 5A
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 875mW
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Datasheets
- NSS40500UW3T2G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSS40500UW3T2G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 2A 2V.With a collector emitter saturation voltage of -310mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 400mA, 4A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
NSS40500UW3T2G Features
the DC current gain for this device is 180 @ 2A 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS40500UW3T2G Applications
There are a lot of ON Semiconductor
NSS40500UW3T2G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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