NSS1C301ET4G
- Mfr.Part #
- NSS1C301ET4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 14,372
- In Stock :
- 14,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Weight :
- 260.39037mg
- Max Power Dissipation :
- 2.1W
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 115mV
- Transition Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300mA, 3A
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 120MHz
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- NSS1C301ET4G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NSS1C301ET4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.The collector emitter saturation voltage is 115mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
NSS1C301ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
NSS1C301ET4G Applications
There are a lot of ON Semiconductor
NSS1C301ET4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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