NSS1C301ET4G

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Mfr.Part #
NSS1C301ET4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 3A DPAK
Stock
14,372
In Stock :
14,372

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
3A
Transistor Element Material :
SILICON
hFE Min :
120
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
140V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1A 2V
Collector Emitter Voltage (VCEO) :
100V
Factory Lead Time :
8 Weeks
Number of Terminations :
2
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2016
Weight :
260.39037mg
Max Power Dissipation :
2.1W
Lead Free :
Lead Free
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
6V
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Max Collector Current :
3A
Collector Emitter Breakdown Voltage :
100V
Number of Pins :
3
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
115mV
Transition Frequency :
120MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Pbfree Code :
yes
Transistor Application :
SWITCHING
Halogen Free :
Halogen Free
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300mA, 3A
Element Configuration :
Single
Gain Bandwidth Product :
120MHz
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Radiation Hardening :
No
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Breakdown Voltage :
100V
Operating Temperature :
-65°C~150°C TJ
Datasheets
NSS1C301ET4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS1C301ET4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-65°C~150°C TJ, NSS1C301ET4G pinout, NSS1C301ET4G datasheet PDF, NSS1C301ET4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS1C301ET4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS1C301ET4G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NSS1C301ET4G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.The collector emitter saturation voltage is 115mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

NSS1C301ET4G Features


the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz


NSS1C301ET4G Applications


There are a lot of ON Semiconductor
NSS1C301ET4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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