NSS12200LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

180mV @ 200mA, 2A

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

12V

Max Power Dissipation :

540mW

Published :

2007

Number of Terminations :

3

Transistor Type :

PNP

Element Configuration :

Single

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-130mV

Surface Mount :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

100MHz

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Breakdown Voltage :

12V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Collector Current :

2A

Terminal Form :

Gull wing

Contact Plating :

Tin

Pbfree Code :

yes

Frequency :

100MHz

Power Dissipation :

540mW

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Factory Lead Time :

8 Weeks

Halogen Free :

Halogen Free

Transition Frequency :

100MHz

Lead Free :

Lead Free

Base Part Number :

NSS12200

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Emitter Base Voltage (VEBO) :

7V

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

250

Collector Base Voltage (VCBO) :

12V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Power - Max :

460mW