NSS1C200MZ4T3G
- Mfr.Part #
- NSS1C200MZ4T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223
- Stock
- 3,494
- In Stock :
- 3,494
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 2A
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 140V
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Max Power Dissipation :
- 2W
- Power - Max :
- 800mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 120MHz
- Transition Frequency :
- 120MHz
- Base Part Number :
- NSS1C200
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Max Collector Current :
- 3A
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- NSS1C200MZ4T3G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSS1C200MZ4T3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
NSS1C200MZ4T3G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200MZ4T3G Applications
There are a lot of ON Semiconductor
NSS1C200MZ4T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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