NSS1C200MZ4T3G

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Mfr.Part #
NSS1C200MZ4T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 100V 2A SOT223
Stock
3,494
In Stock :
3,494

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
2A
Number of Pins :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
140V
Number of Elements :
1
Halogen Free :
Halogen Free
Published :
2008
Max Power Dissipation :
2W
Power - Max :
800mW
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
220mV @ 200mA, 2A
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
120MHz
Transition Frequency :
120MHz
Base Part Number :
NSS1C200
Element Configuration :
Single
Package / Case :
TO-261-4, TO-261AA
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
Surface Mount :
yes
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 2V
Collector Emitter Voltage (VCEO) :
100V
Radiation Hardening :
No
Lead Free :
Lead Free
Factory Lead Time :
4 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pbfree Code :
yes
Number of Terminations :
4
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
100V
Transistor Type :
PNP
Max Collector Current :
3A
Pin Count :
4
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
7V
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
NSS1C200MZ4T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS1C200MZ4T3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Base Part Number:NSS1C200, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, NSS1C200MZ4T3G pinout, NSS1C200MZ4T3G datasheet PDF, NSS1C200MZ4T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS1C200MZ4T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS1C200MZ4T3G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSS1C200MZ4T3G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

NSS1C200MZ4T3G Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz


NSS1C200MZ4T3G Applications


There are a lot of ON Semiconductor
NSS1C200MZ4T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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