NSS12500UW3T2G
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- Mfr.Part #
- NSS12500UW3T2G
- Manufacturer
- onsemi
- Package / Case
- 3-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 5A 3WDFN
- Stock
- 14,107
- In Stock ：
- 14,107
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -200mV
- Max Power Dissipation :
- 875mW
- Base Part Number :
- NSS12500
- Element Configuration :
- Single
- Published :
- 2007
- Turn Off Time-Max (toff) :
- 525ns
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Power - Max :
- 875mW
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 5A
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 12V
- Collector Base Voltage (VCBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 12V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 1.5W
- Package / Case :
- 3-WDFN Exposed Pad
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 12V
- hFE Min :
- 250
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- NSS12500UW3T2G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSS12500UW3T2G Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 260mV @ 400mA, 4A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
NSS12500UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS12500UW3T2G Applications
There are a lot of ON Semiconductor
NSS12500UW3T2G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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