NSS12100XV6T1G
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- Mfr.Part #
- NSS12100XV6T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 12V 1A SOT563
- Stock
- 18,569
- In Stock ：
- 18,569
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Number of Terminations :
- 6
- Terminal Form :
- Flat
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 12V
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 12V
- Package / Case :
- SOT-563, SOT-666
- Element Configuration :
- Single
- Height :
- 600μm
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 150
- Number of Pins :
- 6
- Length :
- 1.7mm
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 12V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -400mV
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 440mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Factory Lead Time :
- 17 Weeks
- Power Dissipation :
- 650mW
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 12V
- Pin Count :
- 6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- NSS12100
- JESD-609 Code :
- e3
- Max Frequency :
- 1MHz
- Published :
- 2006
- Datasheets
- NSS12100XV6T1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
NSS12100XV6T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 440mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 1A volts.
NSS12100XV6T1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSS12100XV6T1G Applications
There are a lot of ON Semiconductor
NSS12100XV6T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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