NSS1C201LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Transition Frequency :

110MHz

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.64mm

Number of Elements :

1

Pbfree Code :

yes

hFE Min :

40

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Number of Pins :

3

Collector Base Voltage (VCBO) :

140V

Max Collector Current :

3A

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Frequency :

110MHz

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 200mA, 2A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Base Part Number :

NSS1C201

Published :

2008

Length :

3.04mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Type :

NPN

Pin Count :

3

Max Power Dissipation :

490mW

Polarity/Channel Type :

NPN

Height :

1.11mm

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

100V

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

7V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

100V

Number of Terminations :

3

Current - Collector (Ic) (Max) :

2A

Surface Mount :

yes

Transistor Element Material :

SILICON

Gain Bandwidth Product :

110MHz

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

150mV

Max Breakdown Voltage :

100V

Power Dissipation :

710mW