NSS12100UW3TCG
- Mfr.Part #
- NSS12100UW3TCG
- Manufacturer
- onsemi
- Package / Case
- 3-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 1A 3WDFN
- Stock
- 21
- In Stock :
- 21
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Type :
- PNP
- Base Part Number :
- NSS12100
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 200MHz
- Power Dissipation :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 440mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 12V
- Transition Frequency :
- 200MHz
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power - Max :
- 740mW
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 1A
- Turn Off Time-Max (toff) :
- 240ns
- Package / Case :
- 3-WDFN Exposed Pad
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Max Power Dissipation :
- 1.1W
- Collector Base Voltage (VCBO) :
- 12V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Datasheets
- NSS12100UW3TCG

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSS12100UW3TCG Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 440mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 1A volts.
NSS12100UW3TCG Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
NSS12100UW3TCG Applications
There are a lot of ON Semiconductor
NSS12100UW3TCG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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