NSS12600CF8T1G

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Mfr.Part #
NSS12600CF8T1G
Manufacturer
onsemi
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 12V 5A CHIPFET
Stock
38,854
In Stock :
38,854

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Configuration :
Single
Qualification Status :
COMMERCIAL
Current - Collector (Ic) (Max) :
5A
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
100MHz
Frequency - Transition :
100MHz
Number of Terminations :
8
JESD-30 Code :
R-PDSO-C8
Power - Max :
830mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Terminal Finish :
Tin
Vce Saturation (Max) @ Ib, Ic :
170mV @ 400mA, 4A
Package / Case :
8-SMD, Flat Lead
Terminal Form :
C BEND
Terminal Position :
Dual
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 1A 2V
Turn Off Time-Max (toff) :
590ns
Pin Count :
8
Time@Peak Reflow Temperature-Max (s) :
40
Voltage - Collector Emitter Breakdown (Max) :
12V
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
265
Transistor Type :
PNP
Turn On Time-Max (ton) :
350ns
Datasheets
NSS12600CF8T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS12600CF8T1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Package / Case:8-SMD, Flat Lead, Mounting Type:Surface Mount, NSS12600CF8T1G pinout, NSS12600CF8T1G datasheet PDF, NSS12600CF8T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS12600CF8T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS12600CF8T1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount

NSS12600CF8T1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 170mV @ 400mA, 4A.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (12V maximal voltage).

NSS12600CF8T1G Features


the DC current gain for this device is 250 @ 1A 2V
the vce saturation(Max) is 170mV @ 400mA, 4A
a transition frequency of 100MHz


NSS12600CF8T1G Applications


There are a lot of Rochester Electronics, LLC
NSS12600CF8T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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