NSS1C200LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

120MHz

Power - Max :

490mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 50mA 2V

Max Power Dissipation :

710mW

Radiation Hardening :

No

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

PNP

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Width :

1.4mm

Published :

1997

Height :

1.01mm

Polarity/Channel Type :

PNP

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

120MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

100V

Element Configuration :

Single

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

140V

Base Part Number :

NSS1C200

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 200mA, 2A

Halogen Free :

Halogen Free

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Max Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING

Max Collector Current :

2A

Power Dissipation :

710mW

Surface Mount :

yes

Number of Elements :

1

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

-40mV

Gain Bandwidth Product :

120MHz

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Number of Terminations :

3