NSS12100M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

12V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

12V

Element Configuration :

Single

Height :

550μm

Collector Base Voltage (VCBO) :

12V

Max Collector Current :

1A

Max Power Dissipation :

625mW

Factory Lead Time :

4 Weeks

Transistor Type :

PNP

Number of Elements :

1

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Base Part Number :

NSS12100

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

850μm

Power Dissipation :

625mW

Package / Case :

SOT-723

Max Breakdown Voltage :

12V

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

-35mV

Transistor Application :

SWITCHING

Length :

1.25mm

Surface Mount :

yes

Published :

2005

Radiation Hardening :

No

Contact Plating :

Tin

REACH SVHC :

No SVHC

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

hFE Min :

80

Number of Terminations :

3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

410mV @ 100mA, 1A

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Pin Count :

3

ECCN Code :

EAR99