NSS12200WT1G
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- Mfr.Part #
- NSS12200WT1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 12V 2A SC88/SC70-6
- Stock
- 2,686
- In Stock ：
- 2,686
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -2A
- Power - Max :
- 450mW
- Voltage - Rated DC :
- -12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 800mA 1.5 V
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 6
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Published :
- 2005
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 12V
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 12V
- Pin Count :
- 6
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 450mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 20mA, 1A
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Max Breakdown Voltage :
- 12V
- hFE Min :
- 100
- Max Collector Current :
- 2A
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- -170mV
- Base Part Number :
- NSS12200
- Power Dissipation :
- 650mW
- Datasheets
- NSS12200WT1G
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
NSS12200WT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 800mA 1.5 V.With a collector emitter saturation voltage of -170mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 20mA, 1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 2A volts at its maximum.
NSS12200WT1G Features
the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS12200WT1G Applications
There are a lot of ON Semiconductor
NSS12200WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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