NSS1C300ET4G
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- Mfr.Part #
- NSS1C300ET4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Pbfree Code :
- yes
- Published :
- 2013
- Weight :
- 350.003213mg
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 300mA, 3A
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Base Voltage (VCBO) :
- 140V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 2.1W
- Number of Terminations :
- 2
- Operating Temperature :
- -65°C~150°C TJ
- Max Breakdown Voltage :
- 100V
- Datasheets
- NSS1C300ET4G
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NSS1C300ET4G Overview
In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 300mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NSS1C300ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS1C300ET4G Applications
There are a lot of ON Semiconductor
NSS1C300ET4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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