MUN5335DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Voltage - Rated DC :

50V

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

47k Ω

Polarity :

NPN, PNP

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.4

Number of Terminations :

6

Resistor - Base (R1) :

2.2k Ω

Max Power Dissipation :

250mW

Max Operating Temperature :

150°C

Number of Pins :

6

Current Rating :

100mA

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Power Dissipation :

187mW

Surface Mount :

yes

hFE Min :

80

Package / Case :

6-TSSOP, SC-88, SOT-363

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

ECCN Code :

EAR99

Max Collector Current :

100mA

Radiation Hardening :

No

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

MUN53**DW1

Pin Count :

6

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)