MUN5335DW1T2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

hFE Min :

80

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Power Dissipation :

187mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Published :

2007

Current Rating :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

50V

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.4

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Base Part Number :

MUN53**DW1

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Emitter Base (R2) :

47k Ω

Min Operating Temperature :

-55°C

Polarity :

NPN, PNP

Resistor - Base (R1) :

2.2k Ω

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Max Power Dissipation :

250mW

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No