MUN5335DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Contact Plating :

Tin

Operating Supply Voltage :

50V

Number of Pins :

6

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Power Dissipation :

250mW

Pin Count :

6

hFE Min :

80

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Base Part Number :

MUN53**DW1

Max Collector Current :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Power Dissipation :

187mW

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

JESD-609 Code :

e3

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

2

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Number of Terminations :

6

Mounting Type :

Surface Mount

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Current Rating :

100mA

Terminal Form :

Gull wing

Published :

2006