MUN5335DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Surface Mount :

yes

Power Dissipation :

187mW

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Operating Temperature :

150°C

Operating Supply Voltage :

50V

Max Collector Current :

100mA

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

47k Ω

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Number of Elements :

2

Voltage - Rated DC :

50V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

2.2k Ω

RoHS Status :

ROHS3 Compliant

Published :

2006

Current Rating :

100mA

Number of Pins :

6

Continuous Collector Current :

100mA

Transistor Application :

SWITCHING

Element Configuration :

Dual

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Polarity :

NPN, PNP

Contact Plating :

Tin

hFE Min :

80

Max Output Current :

100mA

Base Part Number :

MUN53**DW1

Pin Count :

6

Number of Terminations :

6