MUN5333DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2006

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Number of Terminations :

6

Pin Count :

6

Max Power Dissipation :

250mW

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Base Part Number :

MUN53**DW1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

187mW

Contact Plating :

Tin

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Number of Elements :

2

ECCN Code :

EAR99

Polarity :

NPN, PNP

JESD-609 Code :

e3

hFE Min :

80

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

4.7k Ω

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Surface Mount :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 10

Voltage - Rated DC :

50V