MUN5333DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Lead Free :

Lead Free

ECCN Code :

EAR99

Surface Mount :

yes

Element Configuration :

Dual

Continuous Collector Current :

100mA

Current Rating :

100mA

Max Collector Current :

100mA

Base Part Number :

MUN53**DW1

Voltage - Rated DC :

50V

Power Dissipation :

187mW

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

4.7k Ω

Operating Supply Voltage :

50V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

hFE Min :

80

Max Output Current :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Published :

2006

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 10

Resistor - Emitter Base (R2) :

47k Ω

Contact Plating :

Tin

Max Power Dissipation :

250mW

JESD-609 Code :

e3

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260