MUN5332DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

RoHS Status :

RoHS Compliant

Resistor - Base (R1) :

4.7k Ω

Power Dissipation :

187mW

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

hFE Min :

15

Mounting Type :

Surface Mount

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

4.7k Ω

Number of Pins :

6

Min Operating Temperature :

-55°C

Factory Lead Time :

2 Weeks

Published :

2012

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Element Configuration :

Dual

JESD-609 Code :

e3

Base Part Number :

MUN53**DW1

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Terminations :

6