MUN5332DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Continuous Collector Current :

100mA

Surface Mount :

yes

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Power Dissipation :

187mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Max Power Dissipation :

250mW

Current Rating :

100mA

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

4.7k Ω

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Pbfree Code :

yes

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Min Operating Temperature :

-55°C

Polarity :

NPN, PNP

Number of Terminations :

6

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

hFE Min :

15

Base Part Number :

MUN53**DW1

Element Configuration :

Dual

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

4.7k Ω