MUN5332DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

187mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

ECCN Code :

EAR99

Number of Elements :

2

Element Configuration :

Dual

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Pins :

6

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Base Part Number :

MUN53**DW1

Peak Reflow Temperature (Cel) :

240

Resistor - Base (R1) :

4.7k Ω

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

250mW

Resistor - Emitter Base (R2) :

4.7k Ω

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Max Operating Temperature :

150°C

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current Rating :

100mA

Published :

2006

Reach Compliance Code :

not_compliant

Pin Count :

6

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V