MUN5331DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Element Configuration :

Dual

Number of Elements :

2

Resistor - Base (R1) :

2.2k Ω

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Polarity :

NPN, PNP

Radiation Hardening :

No

Factory Lead Time :

22 Weeks

Lead Free :

Lead Free

Power Dissipation :

187mW

Resistor - Emitter Base (R2) :

2.2k Ω

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

8

Pin Count :

6

Base Part Number :

MUN53**DW1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pbfree Code :

yes

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

100mA

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Published :

2009

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA