MUN5330DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

1k Ω

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

hFE Min :

3

Pbfree Code :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

250mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Number of Terminations :

6

Collector Emitter Saturation Voltage :

250mV

Current Rating :

100mA

Terminal Form :

Gull wing

ECCN Code :

EAR99

Width :

1.35mm

Pin Count :

6

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Surface Mount :

yes

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

1k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Time@Peak Reflow Temperature-Max (s) :

40

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Operating Supply Voltage :

50V

Collector Base Voltage (VCBO) :

50V

Element Configuration :

Dual

Height :

1mm

Base Part Number :

MUN53**DW1

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Max Frequency :

10kHz

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Length :

2.2mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

187mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

6V

Number of Elements :

2

JESD-609 Code :

e3

Max Output Current :

100mA

Packaging :

Tape and Reel (TR)

Published :

2006