MUN5330DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

187mW

Polarity :

NPN, PNP

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

50V

Current Rating :

100mA

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Pin Count :

6

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Max Output Current :

100mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Height :

1mm

hFE Min :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Radiation Hardening :

No

Width :

1.35mm

Number of Pins :

6

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

1k Ω

Base Part Number :

MUN53**DW1

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Frequency :

10kHz

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

250mV

Max Collector Current :

100mA

ECCN Code :

EAR99

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

6

Published :

2006

Emitter Base Voltage (VEBO) :

6V

Length :

2.2mm

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

1k Ω

Collector Base Voltage (VCBO) :

50V

Max Power Dissipation :

250mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40