MUN5330DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Collector Emitter Saturation Voltage :

250mV

Terminal Finish :

Tin (Sn)

Length :

2.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Base Voltage (VCBO) :

50V

Collector Emitter Voltage (VCEO) :

50V

Max Frequency :

10kHz

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

1k Ω

Power Dissipation :

187mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Published :

2006

Number of Pins :

6

Base Part Number :

MUN53**DW1

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

100mA

Width :

1.35mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Output Current :

100mA

Surface Mount :

yes

Max Operating Temperature :

150°C

hFE Min :

3

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Current Rating :

100mA

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Resistor - Emitter Base (R2) :

1k Ω

Max Power Dissipation :

250mW

Height :

1mm