MUN5315DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Published :

2006

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Terminal Form :

Gull wing

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Pins :

6

Lead Free :

Lead Free

Surface Mount :

yes

Polarity :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR

ECCN Code :

EAR99

Max Output Current :

100mA

Min Operating Temperature :

-55°C

Pin Count :

6

Resistor - Base (R1) :

10k Ω

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Number of Terminations :

6

Voltage - Rated DC :

50V

Power Dissipation :

187mW

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

500nA

hFE Min :

160

Current Rating :

100mA

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MUN53**DW1

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

250mW