MUN5314DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

6-TSSOP, SC-88, SOT-363

hFE Min :

80

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Height :

900μm

Factory Lead Time :

8 Weeks

Max Output Current :

100mA

JESD-609 Code :

e3

Pbfree Code :

yes

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Current Rating :

100mA

Power Dissipation :

187mW

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Collector Emitter Saturation Voltage :

250mV

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Continuous Collector Current :

100mA

Number of Pins :

6

Width :

1.25mm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Surface Mount :

yes

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Pin Count :

6

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 4.7

Base Part Number :

MUN53**DW1

Number of Elements :

2

Terminal Form :

Gull wing

Published :

2005

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Polarity :

NPN, PNP

Resistor - Base (R1) :

10k Ω

Operating Supply Voltage :

50V