MUN5314DW1T1
- Mfr.Part #
- MUN5314DW1T1
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS BRT DUAL 100MA 50V SOT-363
- Stock
- 21,194
- In Stock :
- 21,194
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO 4.7
- Pbfree Code :
- yes
- Pin Count :
- 6
- Max Collector Current :
- 100mA
- Max Output Current :
- 100mA
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA
- Continuous Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Current Rating :
- 100mA
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Polarity :
- NPN, PNP
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Resistor - Base (R1) :
- 10k Ω
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 2mm
- Element Configuration :
- Dual
- Height :
- 900μm
- Terminal Form :
- Gull wing
- Power Dissipation :
- 187mW
- Number of Elements :
- 2
- Surface Mount :
- yes
- hFE Min :
- 80
- Voltage - Rated DC :
- 50V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Resistor - Emitter Base (R2) :
- 47k Ω
- Width :
- 1.25mm
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 6
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Base Part Number :
- MUN53**DW1
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150°C
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Max Breakdown Voltage :
- 50V
- Number of Terminations :
- 6
- Operating Supply Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Datasheets
- MUN5314DW1T1

MUN5314DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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