MUN5313DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Continuous Collector Current :

100mA

Resistor - Base (R1) :

47k Ω

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Pbfree Code :

yes

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Power Dissipation :

256mW

Surface Mount :

yes

Number of Terminations :

6

ECCN Code :

EAR99

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Polarity :

NPN, PNP

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Number of Elements :

2

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Lead Free :

Lead Free

hFE Min :

80

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Emitter Base (R2) :

47k Ω

Base Part Number :

MUN53**DW1

Max Power Dissipation :

250mW

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

100mA

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Pin Count :

6