MUN5313DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Surface Mount :

yes

JESD-609 Code :

e3

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Polarity :

NPN, PNP

Min Operating Temperature :

-55°C

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Number of Pins :

6

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

MUN53**DW1

Max Collector Current :

100mA

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Power Dissipation :

256mW

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Terminal Form :

Gull wing

Number of Elements :

2

hFE Min :

80

Current Rating :

100mA

Resistor - Base (R1) :

47k Ω

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Pin Count :

6