MUN5312DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

hFE Min :

60

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Resistor - Base (R1) :

22k Ω

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Pbfree Code :

yes

Power Dissipation :

187mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Surface Mount :

yes

Mounting Type :

Surface Mount

Base Part Number :

MUN53**DW1

Max Power Dissipation :

385mW

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

22k Ω

Packaging :

Tape and Reel (TR)

Pin Count :

6

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2010

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1