MUN5312DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

187mW

Height :

900μm

Number of Terminations :

6

Resistor - Emitter Base (R2) :

22k Ω

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Continuous Collector Current :

100mA

Pbfree Code :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Current Rating :

100mA

JESD-609 Code :

e3

Radiation Hardening :

No

Power - Max :

250mW

Base Part Number :

MUN53**DW1

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Width :

1.25mm

Length :

2mm

Number of Elements :

2

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

22k Ω

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Contact Plating :

Tin

hFE Min :

60

Max Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Collector Emitter Saturation Voltage :

250mV

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Application :

SWITCHING

Pin Count :

6