MUN5311DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

35

Max Collector Current :

100mA

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Resistor - Base (R1) :

10k Ω

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Lead Free :

Lead Free

JESD-609 Code :

e3

Published :

2009

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

10k Ω

Polarity :

NPN, PNP

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN53**DW1

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Pin Count :

6

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Radiation Hardening :

No

Surface Mount :

yes