MUN5311DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

Height :

900μm

Operating Supply Voltage :

50V

HTS Code :

8541.21.00.95

Max Output Current :

100mA

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Min Operating Temperature :

-55°C

Published :

2006

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Width :

1.25mm

Collector Emitter Saturation Voltage :

250mV

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

ECCN Code :

EAR99

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pin Count :

6

Continuous Collector Current :

100mA

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

2mm

Element Configuration :

Dual

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Power Dissipation :

187mW

Resistor - Base (R1) :

10k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Base Part Number :

MUN53**DW1

Max Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10k Ω

JESD-609 Code :

e3

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

35

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Mounting Type :

Surface Mount