MUN5311DW1T1G

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Mfr.Part #
MUN5311DW1T1G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS PREBIAS 1NPN 1PNP 50V SC88
Stock
5,542
In Stock :
5,542

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Collector Emitter Saturation Voltage :
250mV
HTS Code :
8541.21.00.95
Halogen Free :
Halogen Free
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Current Rating :
100mA
Collector Emitter Voltage (VCEO) :
50V
Surface Mount :
yes
Pbfree Code :
yes
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Resistor - Emitter Base (R2) :
10k Ω
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Number of Pins :
6
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Collector Current :
100mA
Published :
2006
Peak Reflow Temperature (Cel) :
260
Additional Feature :
BUILT-IN BIAS RESISTOR RATIO 1
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) :
500nA
Resistor - Base (R1) :
10k Ω
Min Operating Temperature :
-55°C
Package / Case :
6-TSSOP, SC-88, SOT-363
Pin Count :
6
Polarity :
NPN, PNP
Element Configuration :
Dual
Number of Elements :
2
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
35 @ 5mA 10V
Operating Supply Voltage :
50V
Terminal Form :
Gull wing
Max Collector Current :
100mA
Width :
1.25mm
Base Part Number :
MUN53**DW1
Length :
2mm
Voltage - Rated DC :
50V
Radiation Hardening :
No
Height :
900μm
Max Operating Temperature :
150°C
Lead Free :
Lead Free
Max Breakdown Voltage :
50V
hFE Min :
35
Number of Terminations :
6
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
50V
JESD-609 Code :
e3
Max Output Current :
100mA
Power Dissipation :
187mW
Contact Plating :
Tin
Max Power Dissipation :
250mW
Factory Lead Time :
8 Weeks
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5311DW1T1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:6-TSSOP, SC-88, SOT-363, Base Part Number:MUN53**DW1, Number of Terminations:6, Mounting Type:Surface Mount, MUN5311DW1T1G pinout, MUN5311DW1T1G datasheet PDF, MUN5311DW1T1G amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5311DW1T1G ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MUN5311DW1T1G


MUN5311DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at

Description:

The MUN5311DW1T1G is a pre-biased NPN/PNP transistor array from ON Semiconductor. It is housed in a SOT-363 package and is designed for use in low-power, low-voltage applications. The device features a low saturation voltage, low input bias current, and low output impedance. It is ideal for use in applications such as power management, motor control, and signal conditioning.

Features:

• Low saturation voltage
• Low input bias current
• Low output impedance
• High gain
• High switching speed
• High current gain
• High voltage gain
• High frequency response
• Low power consumption
• High reliability
• RoHS compliant

Applications:

The MUN5311DW1T1G is suitable for use in a variety of applications, including:

• Power management
• Motor control
• Signal conditioning
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical devices
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