MUN5311DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Published :

2006

Power Dissipation :

187mW

Contact Plating :

Tin

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

250mV

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Height :

900μm

Max Output Current :

100mA

Continuous Collector Current :

100mA

Resistor - Emitter Base (R2) :

10k Ω

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MUN53**DW1

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

HTS Code :

8541.21.00.95

Factory Lead Time :

8 Weeks

Length :

2mm

Polarity :

NPN, PNP

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Number of Pins :

6

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Operating Supply Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Mounting Type :

Surface Mount

Width :

1.25mm

Voltage - Rated DC :

50V

Current Rating :

100mA

Max Power Dissipation :

250mW

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

10k Ω

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

hFE Min :

35

Surface Mount :

yes