MUN5311DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Pin Count :

6

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

250mV

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Resistor - Base (R1) :

10k Ω

Max Operating Temperature :

150°C

Surface Mount :

yes

Current Rating :

100mA

Published :

2006

Pbfree Code :

yes

HTS Code :

8541.21.00.95

Length :

2mm

Base Part Number :

MUN53**DW1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Voltage - Rated DC :

50V

Width :

1.25mm

hFE Min :

35

Number of Terminations :

6

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Power Dissipation :

187mW

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Radiation Hardening :

No

Max Output Current :

100mA

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

50V

Operating Supply Voltage :

50V

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

10k Ω

Height :

900μm

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP