MUN5237DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

250mV

Element Configuration :

Dual

Base Part Number :

MUN52**DW1T

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.47

Resistor - Emitter Base (R2) :

22k Ω

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Polarity :

NPN

Published :

2005

Mounting Type :

Surface Mount

Number of Elements :

2

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G6

Time@Peak Reflow Temperature-Max (s) :

30

Resistor - Base (R1) :

47k Ω

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Current Rating :

100mA

JESD-609 Code :

e0

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

240

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Reach Compliance Code :

not_compliant

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Power Dissipation :

187mW

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Qualification Status :

Not Qualified