MUN5236DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

hFE Min :

80

Transistor Application :

SWITCHING

Transistor Type :

2 NPN - Pre-Biased (Dual)

Voltage - Rated DC :

50V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

Number of Terminations :

6

ECCN Code :

EAR99

Number of Pins :

6

Surface Mount :

yes

Resistor - Base (R1) :

100k Ω

Max Power Dissipation :

250mW

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Pin Count :

6

Max Collector Current :

100mA

Published :

2009

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Base Part Number :

MUN52**DW1T

Max Operating Temperature :

150°C

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

100k Ω

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

187mW

Mounting Type :

Surface Mount

Polarity :

NPN

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Finish :

Tin (Sn)