MUN5236DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MUN52**DW1T

RoHS Status :

Non-RoHS Compliant

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

100k Ω

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Resistor - Base (R1) :

100k Ω

Mount :

Surface Mount

Number of Elements :

2

Published :

2006

Max Collector Current :

100mA

JESD-609 Code :

e0

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Voltage - Rated DC :

50V

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Application :

SWITCHING

Element Configuration :

Dual

Number of Terminations :

6

Pin Count :

6

Terminal Finish :

Tin/Lead (Sn/Pb)

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Continuous Collector Current :

100mA

Power Dissipation :

187mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

240