MUN5235DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current Rating :

100mA

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pin Count :

6

Resistor - Base (R1) :

2.2k Ω

Max Operating Temperature :

150°C

Contact Plating :

Tin

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

6

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Base Part Number :

MUN52**DW1T

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Width :

1.35mm

Length :

2.2mm

Operating Supply Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN - Pre-Biased (Dual)

Height :

1mm

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

250mV

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Element Configuration :

Dual

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Surface Mount :

yes

Number of Terminations :

6

Published :

2003

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Continuous Collector Current :

100mA

Power Dissipation :

187mW

hFE Min :

80

Pbfree Code :

yes