MUN5235DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

2.2k Ω

Max Operating Temperature :

150°C

Current Rating :

100mA

hFE Min :

80

Height :

1mm

REACH SVHC :

No SVHC

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

2

Max Output Current :

100mA

Continuous Collector Current :

100mA

Published :

2003

Collector Emitter Saturation Voltage :

250mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Base Part Number :

MUN52**DW1T

Voltage - Rated DC :

50V

Element Configuration :

Dual

Power Dissipation :

187mW

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Lead Free :

Lead Free

Transistor Type :

2 NPN - Pre-Biased (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.2mm

Packaging :

Tape and Reel (TR)

Width :

1.35mm

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Operating Supply Voltage :

50V

Max Power Dissipation :

250mW

Surface Mount :

yes

Contact Plating :

Tin

Number of Pins :

6

Min Operating Temperature :

-55°C