MUN5234DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

47k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Base (R1) :

22k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Transistor Application :

SWITCHING

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Voltage - Rated DC :

50V

hFE Min :

80

Max Operating Temperature :

150°C

Number of Terminations :

6

Number of Pins :

6

Max Collector Current :

100mA

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

30 Weeks

Max Power Dissipation :

250mW

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Published :

2009

Continuous Collector Current :

100mA

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

500nA

Current Rating :

100mA

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

6

Base Part Number :

MUN52**DW1T

Power Dissipation :

187mW

Terminal Form :

Gull wing

Element Configuration :

Dual

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Polarity :

NPN