MUN5233DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Pin Count :

6

Resistor - Emitter Base (R2) :

47k Ω

Current Rating :

100mA

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Base Part Number :

MUN52**DW1T

Min Operating Temperature :

-55°C

Max Output Current :

100mA

Number of Pins :

6

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Resistor - Base (R1) :

4.7k Ω

Factory Lead Time :

8 Weeks

Max Power Dissipation :

250mW

Continuous Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

hFE Min :

80

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Power Dissipation :

187mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Operating Supply Voltage :

50V

Number of Terminations :

6

Element Configuration :

Dual

Published :

2005

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA