MUN5232DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Voltage - Rated DC :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Resistor - Emitter Base (R2) :

4.7k Ω

Current Rating :

100mA

hFE Min :

15

ECCN Code :

EAR99

Number of Elements :

2

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Base Part Number :

MUN52**DW1T

Min Operating Temperature :

-55°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Radiation Hardening :

No

Published :

2003

Power Dissipation :

256mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Continuous Collector Current :

100mA

Polarity :

NPN

Resistor - Base (R1) :

4.7k Ω

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

6

Max Output Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Transistor Application :

SWITCHING

Contact Plating :

Tin

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Max Operating Temperature :

150°C

Number of Pins :

6