MUN5232DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

256mW

JESD-609 Code :

e3

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Max Output Current :

100mA

Resistor - Emitter Base (R2) :

4.7k Ω

Pin Count :

6

hFE Min :

15

Published :

2003

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MUN52**DW1T

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Number of Terminations :

6

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Resistor - Base (R1) :

4.7k Ω

Factory Lead Time :

8 Weeks

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Halogen Free :

Halogen Free

Continuous Collector Current :

100mA

Transistor Application :

SWITCHING

Number of Elements :

2

Max Operating Temperature :

150°C

Pbfree Code :

yes

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

Element Configuration :

Dual

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Lead Free :

Lead Free

Operating Supply Voltage :

50V

Number of Pins :

6

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

100mA

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)