MUN5231DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Emitter Base (R2) :

2.2k Ω

Number of Pins :

6

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

2 NPN - Pre-Biased (Dual)

Factory Lead Time :

10 Weeks

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Number of Terminations :

6

Transistor Application :

SWITCHING

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

100mA

Base Part Number :

MUN52**DW1T

Qualification Status :

Not Qualified

Element Configuration :

Dual

Resistor - Base (R1) :

2.2k Ω

Surface Mount :

yes

Power Dissipation :

187mW

Lead Free :

Lead Free

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

hFE Min :

8

Pbfree Code :

yes

Published :

2010