MUN5230DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Operating Supply Voltage :

50V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Collector Emitter Saturation Voltage :

250mV

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Height :

1mm

Max Power Dissipation :

250mW

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

8 Weeks

Length :

2.2mm

Power Dissipation :

187mW

Max Breakdown Voltage :

50V

Width :

1.35mm

Collector Base Voltage (VCBO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Resistor - Emitter Base (R2) :

1k Ω

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Max Output Current :

100mA

Continuous Collector Current :

100mA

Number of Elements :

2

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Pbfree Code :

yes

Contact Plating :

Tin

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

Max Frequency :

10kHz

Voltage - Rated DC :

50V

Terminal Form :

Gull wing

Base Part Number :

MUN52**DW1T

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Base (R1) :

1k Ω

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Surface Mount :

yes

hFE Min :

3

Pin Count :

6

Element Configuration :

Dual

Max Collector Current :

100mA

Published :

2005

Min Operating Temperature :

-55°C