MUN5216DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

160

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Max Power Dissipation :

250mW

Base Part Number :

MUN52**DW1T

Min Operating Temperature :

-55°C

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

4.7k Ω

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR

Max Output Current :

100mA

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Current Rating :

100mA

Continuous Collector Current :

100mA

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Radiation Hardening :

No

Halogen Free :

Halogen Free

Pbfree Code :

yes

Element Configuration :

Dual

Max Operating Temperature :

150°C

Operating Supply Voltage :

50V

Power Dissipation :

187mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Max Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2007

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Contact Plating :

Tin

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)