MUN5216DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Max Output Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Power Dissipation :

187mW

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Number of Elements :

2

Current Rating :

100mA

Lead Free :

Lead Free

Base Part Number :

MUN52**DW1T

Operating Supply Voltage :

50V

Number of Pins :

6

JESD-609 Code :

e3

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Surface Mount :

yes

Number of Terminations :

6

hFE Min :

160

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Additional Feature :

BUILT-IN BIAS RESISTOR

Contact Plating :

Tin

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Pin Count :

6

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Continuous Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

Polarity :

NPN